Solid-state imaging element, method for manufacturing solid-state imaging element, and electronic apparatus

ABSTRACT

[Problem] Provided are: a solid-state imaging element capable of actualizing a phase difference detection pixel that enables a finer pattern of pixels and also enables improvement in quality of a captured image in a stacked structure including a plurality of photodiodes; a method for manufacturing the solid-state imaging element; and an electronic apparatus. 
     [Solution] Provided is a solid-state imaging element including a plurality of pixels including at least two phase difference detection pixels for focus detection. In the solid-state imaging element, each pixel has a stacked structure including a plurality of photoelectric conversion elements that are stacked on top of each other and absorb light beams different in wavelength from one another to generate electrical charges, and each phase difference detection pixel includes, in the stacked structure, a color filter that partially covers an upper face of one of the photoelectric conversion elements and absorbs a light beam with a specific wavelength.

CROSS REFERENCE TO RELATED APPLICATIONS

The present application is a continuation application of U.S. patentapplication Ser. No. 16/638,861, filed Feb. 13, 2020, which is aNational Phase of International Patent Application No. PCT/JP2018/019519filed on May 21, 2018, which claims the benefit of priority fromJapanese Patent Application No. 2017-159376 filed in the Japan PatentOffice on Aug. 22, 2017. Each of the above-referenced applications ishereby incorporated herein by reference in its entirety.

FIELD

The present disclosure relates to a solid-state imaging element, amethod for manufacturing the solid-state imaging element, and anelectronic apparatus.

BACKGROUND

A recent imaging device has employed, as an autofocus function, a methodof detecting a phase difference, using a pair of phase differencedetection pixels having asymmetric sensitivity with respect to incidentangles of light beams. A solid-state imaging element disclosed in PatentLiterature 1 listed below can be cited as such an example. In PatentLiterature 1, specifically, the foregoing phase difference detectionpixels are actualized by providing divided lower electrodes of pixels orproviding light shielding films on the pixels.

CITATION LIST Patent Literature

Patent Literature 1: JP 2015-50331 A

SUMMARY Technical Problem

In the phase difference detection pixels disclosed in Patent Literature1, unnecessary electrical charges are generated; therefore, it isoccasionally necessary to provide a mechanism (such as a plug) fordischarging the unnecessary electrical charges. As a result, themechanism for discharging the unnecessary electrical charges occupies acertain area on a substrate, which imposes limitations onminiaturization of a solid-state imaging element.

In addition, in a case where a stacked structure including a pluralityof photodiodes that absorb light beams different in wavelength from oneanother is applied as a structure of each phase difference detectionpixel including the light shielding film, for example, a phasedifference is detected with one of the stacked photodiodes. In thiscase, because of the presence of the light shielding films, the otherphotodiodes stacked in each phase difference detection pixel are smallerin amount of incident light beams than photodiodes in a normal pixelincluding no light shielding film; therefore, each phase differencedetection pixel is regarded as a defective pixel due to decrease insensitivity. Accordingly, the photodiodes that are not used fordetection of a phase difference are incapable of functioning as thephotodiodes in the normal pixel, which may cause reduction in quality(such as resolution) of an image captured by a solid-state imagingelement.

In view of the circumstances described above, hence, the presentdisclosure proposes: a novel and improved solid-state imaging elementcapable of actualizing a phase difference detection pixel that enables afiner pattern of pixels and also enables improvement in quality of acaptured image in a stacked structure including a plurality ofphotodiodes; a method for manufacturing the solid-state imaging element;and an electronic apparatus.

Solution to Problem

According to the present disclosure, a solid-state imaging element isprovided that includes: a plurality of pixels including at least twophase difference detection pixels for focus detection, wherein eachpixel has a stacked structure including a plurality of photoelectricconversion elements that are stacked on top of each other and absorblight beams different in wavelength from one another to generateelectrical charges, and each phase difference detection pixel includes,in the stacked structure, a color filter that partially covers an upperface of one of the photoelectric conversion elements and absorbs a lightbeam with a specific wavelength.

Moreover, according to the present disclosure, a method formanufacturing a solid-state imaging element including a plurality ofpixels including at least two phase difference detection pixels forfocus detection is provided that includes: stacking a plurality ofphotoelectric conversion elements that absorb light beams different inwavelength from one another to generate electrical charges; and forminga color filter that partially covers an upper face of one of thephotoelectric conversion elements and absorbs a light beam with aspecific wavelength.

Moreover, according to the present disclosure, an electronic apparatusis provided that includes: a solid-state imaging element including aplurality of pixels including at least two phase difference detectionpixels for focus detection, wherein each pixel has a stacked structureincluding a plurality of photoelectric conversion elements that arestacked on top of each other and absorb light beams different inwavelength from one another to generate electrical charges, and eachphase difference detection pixel includes, in the stacked structure, acolor filter that partially covers an upper face of one of thephotoelectric conversion elements and absorbs a light beam with aspecific wavelength.

Advantageous Effects of Invention

As described above, according to the present disclosure, it is possibleto actualize a phase difference detection pixel that enables a finerpattern of pixels and also enables improvement in quality of a capturedimage in a stacked structure including a plurality of photodiodes.

It should be noted that the foregoing advantageous effect is notnecessarily limitative, and any advantageous effects described in thepresent specification or other advantageous effects to be understoodfrom the present specification may be produced in addition to theforegoing advantageous effect or in place of the foregoing advantageouseffect.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is an explanatory view illustrating an exemplary planarconfiguration of a solid-state imaging element according to anembodiment of the present disclosure.

FIG. 2 is an explanatory view illustrating an exemplary sectionalconfiguration of a normal pixel according to an embodiment of thepresent disclosure.

FIG. 3 is an explanatory view illustrating an exemplary sectionalconfiguration of a phase difference detection pixel according to a firstembodiment of the present disclosure.

FIG. 4 is an explanatory view illustrating an exemplary planarconfiguration of a pixel array part according to the same embodiment.

FIG. 5 is an explanatory view illustrating an exemplary planarconfiguration of a pixel array part according to Modification 1 of thesame embodiment.

FIG. 6 is an explanatory view illustrating an exemplary planarconfiguration of a pixel array part according to Modification 2 of thesame embodiment.

FIG. 7 is an explanatory view illustrating an exemplary planarconfiguration of a pixel array part according to Modification 3 of thesame embodiment.

FIG. 8 is an explanatory view illustrating an exemplary planarconfiguration of a pixel array part according to Modification 4 of thesame embodiment.

FIG. 9 is an explanatory view (part 1) illustrating an exemplary planarconfiguration of a pixel array part according to Modification 5 of thesame embodiment.

FIG. 10 is an explanatory view (part 2) illustrating an exemplary planarconfiguration of the pixel array part according to Modification 5 of thesame embodiment.

FIG. 11 is an explanatory view (part 1) illustrating an exemplarysectional configuration of a phase difference detection pixel accordingto a second embodiment of the present disclosure.

FIG. 12 is an explanatory view (part 2) illustrating an exemplarysectional configuration of the phase difference detection pixelaccording to the same embodiment.

FIG. 13 is an explanatory view illustrating an exemplary planarconfiguration of a pixel array part according to the same embodiment.

FIG. 14 is an explanatory view illustrating an exemplary sectionalconfiguration of a phase difference detection pixel according to a thirdembodiment of the present disclosure.

FIG. 15 is an explanatory view illustrating an exemplary sectionalconfiguration of a phase difference detection pixel according to afourth embodiment of the present disclosure.

FIG. 16 is an explanatory view illustrating an exemplary sectionalconfiguration of a phase difference detection pixel according to a fifthembodiment of the present disclosure.

FIG. 17 is an explanatory view (part 1) illustrating a sixth embodimentof the present disclosure.

FIG. 18 is an explanatory view (part 2) illustrating the sameembodiment.

FIG. 19 is an explanatory view (part 3) illustrating the sameembodiment.

FIG. 20 is a sectional view (part 1) illustrating a method formanufacturing the solid-state imaging element according to the firstembodiment of the present disclosure.

FIG. 21 is a sectional view (part 2) illustrating the method formanufacturing the solid-state imaging element according to the firstembodiment of the present disclosure.

FIG. 22 is a sectional view (part 3) illustrating the method formanufacturing the solid-state imaging element according to the firstembodiment of the present disclosure.

FIG. 23 is a sectional view (part 4) illustrating the method formanufacturing the solid-state imaging element according to the firstembodiment of the present disclosure.

FIG. 24 is an explanatory view illustrating an exemplary electronicapparatus including an imaging device including a solid-state imagingelement according to an embodiment of the present disclosure.

DESCRIPTION OF EMBODIMENTS

Hereinafter, preferred embodiments of the present disclosure will bedescribed in detail with reference to the accompanying drawings. Itshould be noted in the present specification and the drawings thatconstituent elements that are substantially identical in function andconfiguration to one another are denoted with the same reference signsfor avoidance of their repetitive description.

Also in the present specification and the drawings, constituent elementsthat are substantially identical or similar in function andconfiguration to one another are denoted with the same reference signsexcept for the last numerals in some instances in order to distinguishthe constituent elements from one another. However, the constituentelements that are substantially identical or similar in function andconfiguration to one another are denoted with the same reference signsif the constituent elements are not necessarily distinguished from oneanother. In addition, similar constituent elements in differentembodiments are denoted with the same reference signs except for thelast alphabets in some instances in order to distinguish the constituentelements from one another. However, the similar constituent elements aredenoted with the same reference signs if the constituent elements arenot necessarily distinguished from one another.

The drawings for reference in the following description are merely usedfor illustrating an embodiment of the present disclosure andfacilitating the understanding of an embodiment of the presentdisclosure. For ease of the understanding, the shapes, dimensions,ratios, and the like of constituent elements illustrated in the drawingsare different from those of actual constituent elements in someinstances. In addition, a solid-state imaging element illustrated in thedrawings may be appropriately designed and changed in consideration ofthe following description and the known art. In describing a solid-stateimaging element with reference to a sectional view, an upper-lowerdirection of a stacked structure in the solid-state imaging elementcorresponds to a relative direction on the assumption that a lightincident surface of the solid-state imaging element is directed upward,and is therefore different from an upper-lower direction according toactual gravitational acceleration in some instances.

In the following description, the term “substantially identical”involves not only mathematic identification or equality, but also adifference (an error) allowable in operations of a solid-state imagingelement according to an embodiment of the present disclosure. Also inthe following description, the wording of a shape means a shape that isdefined geometrically, and also means that a shape involving adifference (an error, a distortion) allowable in operations of asolid-state imaging element and steps of manufacturing the solid-stateimaging element is regarded as a shape similar to the shape definedgeometrically.

Also in the following description, the term “electrically connect”refers to a state in which a plurality of components are directlyconnected to one another or are indirectly connected to one another viaany components.

The description is given in the following order.

1. Schematic Configuration of Solid-State Imaging Element 2. SpecificConfiguration of Normal Pixel 3. Background to How the Present InventorsHave Devised Embodiment of the Present Disclosure 4. First Embodiment4.1 Specific Configurations of Phase Difference Detection Pixels 4.2Modifications 5. Second Embodiment 5.1 Specific Configurations of PhaseDifference Detection Pixels Detecting Phase Difference Based on BlueLight Beams 5.2 Specific Configurations of Phase Difference DetectionPixels Detecting Phase Difference Based on Red Light Beams 5.3 MixedPhase Difference Detection Pixels Detecting Phase Differences Based onLight Beams of Different Colors 6. Third Embodiment 7. Fourth Embodiment8. Fifth Embodiment 9. Sixth Embodiment 10. Seventh Embodiment 11.Eighth Embodiment 12. Conclusion 13. Supplement 1. SCHEMATICCONFIGURATION OF SOLID-STATE IMAGING ELEMENT

With reference to FIG. 1, first, a description will be given of aschematic configuration of a solid-state imaging element 1 according toan embodiment of the present disclosure. FIG. 1 is an explanatory viewillustrating an exemplary planar configuration of a solid-state imagingelement 1 according to an embodiment of the present disclosure. Asillustrated in FIG. 1, a solid-state imaging element 1 according to anembodiment of the present disclosure includes: a semiconductor substrate10 made of, for example, silicon; a pixel array part 30 where aplurality of pixels 100 are arranged in a matrix form, the pixel arraypart 30 being provided on the semiconductor substrate 10; and peripheralcircuitry provided on the semiconductor substrate 10 so as to surroundthe pixel array part 30. In addition, the solid-state imaging element 1includes as the peripheral circuitry a vertical drive circuit 32, columnsignal processing circuits 34, a horizontal drive circuit 36, an outputcircuit 38, a control circuit 40, and the like. Hereinafter, adescription will be given of the details of each block in thesolid-state imaging element 1.

(Pixel Array Part 30)

As described earlier, the pixel array part 30 has the plurality ofpixels 100 arranged two-dimensionally in the matrix form. The pixels 100include a normal pixel 100 x that generates a signal for imagegeneration, and a pair of phase difference detection pixels 100 a and100 b that generate a signal for focus detection. That is, in the pixelarray part 30, some normal pixels 100 x are exchanged with phasedifference detection pixels 100 a and 100 b.

Specifically, a phase difference detection pixel 100 a and a phasedifference detection pixel 100 b provided in a pair each include, forexample, a color filter 600 and the like to be described later, and haveasymmetric sensitivity with respect to incident angles of light beams.As described above, the phase difference detection pixels 100 a and 100b provided in a pair have asymmetric sensitivity with respect toincident angles of light beams, which cause a shift of detected images.An imaging device (not illustrated) including the solid-state imagingelement 1 calculates a phase shift amount based on this shift of images,calculates a defocus amount, and adjusts (moves) a shooting lens (notillustrated), thereby achieving an autofocus function. It should benoted that the phase difference detection pixels 100 a and 100 bprovided in a pair may be arranged in a left-right direction (ahorizontal direction) in FIG. 1 or may be arranged in an upper-lowerdirection (a vertical direction) in FIG. 1. In addition, the phasedifference detection pixels 100 a and 100 b provided in a pair may bearranged side by side or may be arranged with a normal pixel 100 xinterposed therebetween.

Each pixel 100 includes a photodiode serving as a photoelectricconversion element, and a plurality of pixel transistors (e.g.,metal-oxide-semiconductor (MOS) transistors). Specifically, the pixeltransistors include, for example, four MOS transistors, that is, atransfer transistor, a select transistor, a reset transistor, and anamplification transistor.

Alternatively, each pixel 100 may have a common pixel structure. Thepixel common structure is constituted of a plurality of photodiodes, aplurality of transfer transistors, one floating diffusion (floatingdiffusion region) to be shared, and one common transistor to be shared.That is, in the common pixel structure, the photodiodes and transfertransistors each constituting a unit pixel share one floating diffusionand one common transistor. A specific structure of a normal pixel 100 xwill be described later.

(Vertical Drive Circuit 32)

The vertical drive circuit 32 includes, for example, a shift register.The vertical drive circuit 32 selects one of pixel drive wires 42 andsupplies pulses for driving pixels 100 to the selected pixel drive wire42 to drive the pixels 100 on a row basis. In other words, the verticaldrive circuit 32 successively scans the pixels 100 of the pixel arraypart 30 on a row basis in the vertical direction (the upper-lowerdirection in FIG. 1), and supplies pixel signals based on signalelectrical charges generated in accordance with the amounts of lightbeams received by the photodiodes of the respective pixels 100, to thecolumn signal processing circuits 34 (to be described later) throughvertical signal lines 44.

(Column Signal Processing Circuits 34)

The column signal processing circuits 34 are respectively disposed forthe columns of the pixels 100. Each column signal processing circuit 34performs signal processing, such as noise removal, on pixel signalsoutput from pixels 100 in one row, on a pixel column basis. For example,each column signal processing circuit 34 performs signal processing,such as correlated double sampling (CDS) and analog-degital (AD)conversion, for removing fixed pattern noise unique to each pixel.

(Horizontal Drive Circuit 36)

The horizontal drive circuit 36 includes, for example, a shift register.The horizontal drive circuit 36 successively outputs horizontal scanningpulses, thereby sequentially selecting the column signal processingcircuits 34 and causing the column signal processing circuits 34 torespectively output pixel signals to a horizontal signal line 46.

(Output Circuit 38)

The output circuit 38 successively receives pixel signals from thecolumn signal processing circuits 34 through the horizontal signal line46, performs signal processing on the received pixel signals, andoutputs the pixel signals subjected to the signal processing. The outputcircuit 38 may function as, for example, a functional unit configured toperform buffering. Alternatively, the output circuit 38 may performprocessing such as black level adjustment, column variation correction,and various kinds of digital signal processing. It should be noted thatthe buffering refers to processing of temporarily storing pixel signalsin order to compensate differences in processing speed and transferspeed, in exchanging the pixel signals. In addition, an input and outputterminal 48 is a terminal for exchanging signals with an externaldevice.

(Control Circuit 40)

The control circuit 40 receives an input clock and data for instructing,for example, an operation mode, and outputs data such as internalinformation of the solid-state imaging element 1. That is, the controlcircuit 40 generates clock signals and control signals as references ofoperations of the vertical drive circuit 32, column signal processingcircuits 34, horizontal drive circuit 36, and the like, on the basis ofvertical synchronizing signals, horizontal synchronizing signals, andmaster clocks. The control circuit 40 then outputs the generated clocksignals and control signals to the vertical drive circuit 32, columnsignal processing circuits 34, horizontal drive circuit 36, and thelike.

2. SPECIFIC CONFIGURATION OF NORMAL PIXEL

With reference to FIG. 2, next, a description will be given of aspecific configuration in a sectional structure of a normal pixel 100according to an embodiment of the present disclosure. FIG. 2 is anexplanatory view illustrating exemplary sectional configurations ofnormal pixels 100 x according to an embodiment of the presentdisclosure. Specifically, the exemplary sectional configurationscorrespond to sections of three normal pixels 100 x cut along athickness direction of a semiconductor substrate 10.

As illustrated in FIG. 2, in the normal pixels 100, the semiconductorsubstrate 10 made of, for example, silicon includes a semiconductorregion 12 of a first conduction type (e.g., a P type), and twosemiconductor regions 14 a and 14 b of a second conduction type (e.g.,an N type). In the semiconductor region 12, the semiconductor region 14a is superimposed on the semiconductor region 14 b in the thicknessdirection of the semiconductor substrate 10. The semiconductor regions14 a and 14 b thus formed serve as two stacked photodiodes (PDs)(photoelectric conversion elements) 202 and 204 by PN junction. Forexample, the PD 202 having the semiconductor region 14 a is a photodiodethat receives and photoelectrically converts a blue light beam (e.g., alight beam with a wavelength in a range from 450 nm to 495 nm). The PD204 having the semiconductor region 14 b is a photodiode that receivesand photoelectrically converts a red light beam (e.g., a light beam witha wavelength in a range from 620 nm to 750 nm).

The semiconductor substrate 10 also includes a wiring layer 16 providedin a region (the lower side in FIG. 2) located opposite thesemiconductor region 12. Furthermore, the wiring layer 16 is providedwith a plurality of pixel transistors (not illustrated) that readelectrical charges generated at the PDs 202 and 204, and a plurality ofwires 18 formed from tungsten (W), aluminum (Al), copper (Cu), or thelike. It should be noted that FIG. 2 does not specifically illustratethe wiring layer 16.

The semiconductor substrate 10 may also include a plug (not illustrated)that outputs to the wiring layer 16 electrical charges photoelectricallyconverted by a photoelectric conversion film 300 to be described later,the plug being provided to penetrate through the semiconductor substrate10. In this case, the plug may be connected to a floating diffusion part(not illustrated) provided in a semiconductor region of a secondconduction type (e.g., an N type) provided in the semiconductorsubstrate 10, via the wires 18 provided in the wiring layer 16. Thefloating diffusion part is a region for temporarily holding electricalcharges photoelectrically converted by the photoelectric conversion film300.

As illustrated in FIG. 2, a transparent insulating film 400 is providedon the semiconductor substrate 10. The transparent insulating film 400includes, for example, a laminated film of two or three hafnium oxide(HfO₂) films and silicon oxide films.

The photoelectric conversion film 300 is provided on the transparentinsulating film 400 with the photoelectric conversion film 300sandwiched between an upper electrode 302 a and lower electrodes 302 b.The photoelectric conversion film 300, the upper electrode 302 a, andthe lower electrodes 302 b constitute a PD 200. The PD 200 is aphotodiode that receives and photoelectrically converts, for example, agreen light beam (e.g., a light beam with a wavelength in a range from495 nm to 570 nm). It should be noted that each of the upper electrode302 a and the lower electrodes 302 b may be formed of, for example, anindium tin oxide (ITO) film, an indium zinc oxide film, or the like. Thematerial for the photoelectric conversion film 300 will be described indetail later.

As illustrated in FIG. 2, the upper electrode 302 a is continuouslyprovided for the plurality of pixels 100 in common. On the other hand,the lower electrodes 302 b are respectively provided for the pixels 100in a divided manner. Moreover, the lower electrodes 302 b may beelectrically connected to the forgoing plug (not illustrated) via wires(not illustrated) formed from tungsten, aluminum, copper, or the likeand provided to penetrate through the transparent insulating film 400.

As illustrated in FIG. 2, a high refractive index layer 500 is providedon the upper electrode 302 a. The high refractive index layer 500includes an inorganic film such as a silicon nitride film (SiN), asilicon oxynitride film (SiON), or silicon carbide (SiC). Furthermore,on-chip lenses (lens parts) 502 are provided on the high refractiveindex layer 500. Each on-chip lens 502 may be formed from, for example,a silicon nitride film (SiN) or a resin material such as a styreneresin, an acrylic resin, a styrene-acrylic copolymer resin, or asiloxane resin.

As described above, each normal pixel 100 x of the solid-state imagingelement 1 according to an embodiment of the present disclosure has astacked structure including the PDs 200, 202, and 204 respectivelycorresponding to light beams of three colors. In other words, thesolid-state imaging element 1 is a longitudinal spectral solid-stateimaging element in which the photoelectric conversion film 300 (the PD200) formed above the semiconductor substrate 10 photoelectricallyconverts a green light beam, and the PD 202 and the PD 204 in thesemiconductor substrate 10 photoelectrically convert a blue light beamand a red light beam, respectively.

It should be noted that the photoelectric conversion film 300 may beformed from an organic material or an inorganic material. For example,in a case where the photoelectric conversion film 300 is formed from anorganic material, the organic material may be selected from four kinds:(a) a P-type organic semiconductor material; (b) an N-type organicsemiconductor material; (c) a laminated structure including at least twoof a P-type organic semiconductor material layer, an N-type organicsemiconductor material layer, and a mixed layer (a bulk heterostructure)of a P-type organic semiconductor material with an N-type organicsemiconductor material; and (d) a mixed layer of a P-type organicsemiconductor material with an N-type organic semiconductor material.

Specific examples of the P-type organic semiconductor material mayinclude a naphthalene derivative, an anthracene derivative, aphenanthrene derivative, a pyrene derivative, a perylene derivative, atetracene derivative, a pentacene derivative, a quinacridone derivative,a thiophene derivative, a thienothiophene derivative, a benzothiophenederivative, a benzothienobenzothiophene derivative, a triallylaminederivative, a carbazole derivative, a perylene derivative, a picenederivative, a chrysene derivative, a fluoranthene derivative, aphthalocyanine derivative, a subphthalocyanine derivative, asubporphyrazine derivative, a metal complex with a heterocyclic compoundas a ligand, a polythiophene derivative, a polybenzothiadiazolederivative, a polyfluorene derivative, and the like.

Examples of the N-type organic semiconductor material may include afullerene and a fullerene derivative <e.g., a fullerene (a higherfullerene) such as C60, C70, or C74, an endohederal fullerene or thelike) or a fullerene derivative (e.g., a fullerene fluoride, aphenyl-C61-butyric acid methyl ester (PCBM) fullerene compound, afullerene multimer, and the like)>, an organic semiconductor that isdeeper in highest occupied molecular orbital (HOMO) and lowestunoccupied molecular orbital (LUMO) than a P-type organic semiconductor,a transparent inorganic metal oxide, and the like. More specificexamples of the N-type organic semiconductor material may include aheterocyclic compound containing a nitrogen atom, an oxygen atom, or asulfur atom, an organic molecule having, as a part of its molecularskeleton, for example, a pyridine derivative, a pyrazine derivative, apyrimidine derivative, a triazine derivative, a quinoline derivative, aquinoxaline derivative, an isoquinoline derivative, an acridinederivative, a phenazine derivative, a phenanthroline derivative, atetrazole derivative, a pyrazole derivative, an imidazole derivative, athiazole derivative, an oxazole derivative, an imidazole derivative, abenzimidazole derivative, a benzotriazole derivative, a benzoxazolederivative, a benzoxazole derivative, a carbazole derivative, abenzofuran derivative, a dibenzofuran derivative, a subporphyrazinederivative, a polyphenylene vinylene derivative, a polybenzothiadiazolederivative, a polyfluorene derivative, or the like, an organic metalcomplex, and a subphthalocyanine derivative. Moreover, examples of agroup and the like contained in the fullerene derivative may include: abranched or cyclic alkyl group or phenyl group; a group having a linearor condensed aromatic compound; a group having a halide; a partialfluoroalkyl group; a perfluoroalkyl group; an alkylsilyl group; analkoxysilyl group; an arylsilyl group; an arylsulfanyl group; analkylsulfanyl group; an arylsulfonyl group; an alkylsulfonyl group; anarylsulfide group; an alkylsulfide group; an amino group; an alkylaminogroup; an arylamino group; a hydroxy group; an alkoxy group; anacylamino group; an acyloxy group; a carbonyl group; a carboxy group; acarboxamide group; a carboalkoxy group; an acyl group; a sulfonyl group;a cyano group; a nitro group; a group having a chalcogenide; a phosphinegroup; a phosphonic group, and derivatives of these groups. It should benoted that the thickness of the photoelectric conversion film 300 formedfrom an organic material is not limited. For example, the thickness maybe 1×10-8 m to 5×10-7 m, preferably 2.5×10-8 m to 3×10-7 m, morepreferably 2.5×10-8 m to 2×10-7 m. In the foregoing description,moreover, the organic semiconductor materials are classified into a Ptype and an N type. Herein, a P type means that holes are easilytransported, and an N type means that electrons are easily transported.In other words, an organic semiconductor material is not limited to suchan interpretation that an organic semiconductor material has holes orelectrons as majority carriers for thermal excitation like an inorganicsemiconductor material.

More specifically, in order to function as the photoelectric conversionfilm 300 of the PD 200 that receives and photoelectrically converts agreen light beam, the photoelectric conversion film 300 may contain, forexample, a light absorption material such as a rhodamine dye, amelocyanine dye, a quinacridone derivative, or a subphthalocyanine dye(a subphthalocyanine derivative).

In the case where the photoelectric conversion film 300 is formed froman inorganic material, examples of the inorganic semiconductor materialmay include crystalline silicon, amorphous silicon, microcrystallinesilicon, crystalline selenium, amorphous selenium, and CIGS (CulnGaSe),CIS (CulnSe₂), CuInS₂, CuAlS₂, CuAlSe₂, CuGaS₂, CuGaSe₂, AgAIS₂,AgAlSe₂, AgInS₂, and AgInSe₂ as chalcopyrite compounds. Alternatively,examples of the inorganic semiconductor material may include GaAs, InP,AlGaAs, InGaP, AlGaInP, and InGaAsP as III-V group compounds. Moreover,examples of the inorganic semiconductor material may include compoundsemiconductors such as CdSe, CdS, In₂Se₃, In₂S₃, Bi₂Se₃, Bi₂S₃, ZnSe,ZnS, PbSe, and PbS. In addition, in an embodiment of the presentdisclosure, quantum dots made of these materials may be used as thephotoelectric conversion film 300.

It should be noted that the solid-state imaging element 1 according toan embodiment of the present disclosure is not limited to the stackedstructure including the PD 200 provided above the semiconductorsubstrate 10 and including the photoelectric conversion film 300 and thePDs 202 and 204 provided in the semiconductor substrate 10. In thepresent embodiment, for example, the solid-state imaging element 1 mayhave a stacked structure including the PD 200 provided above thesemiconductor substrate 10 and including the photoelectric conversionfilm 300 and the PD 202 provided in the semiconductor substrate 10, thatis, a stacked structure including the two PDs 200 and 202. Also in thepresent embodiment, the solid-state imaging element 1 may have a stackedstructure including the three PDs 200, 202, and 204 provided above thesemiconductor substrate 10. In such a case, each of the PDs 200, 202,and 204 may include the photoelectric conversion film 300. In addition,each photoelectric conversion film 300 may be formed from an organicsemiconductor material. In this case, in order to function as thephotoelectric conversion film 300 of the PD 202 that receives andphotoelectrically converts a blue light beam, the photoelectricconversion film 300 may contain, for example, a coumaric acid dye,tris-8-hydroxyquinoline aluminum (Alq3), a melocyanine dye, or the like.In order to function as the photoelectric conversion film 300 of the PD204 that receives and photoelectrically converts a red light beam, thephotoelectric conversion film 300 may contain a phthalocyanine dye, asubphthalocyanine dye (a subphthalocyanine derivative), or the like.

3. BACKGROUND TO HOW THE PRESENT INVENTORS HAVE DEVISED EMBODIMENT OFTHE PRESENT DISCLOSURE

Next, a description will be given of the background to how the presentinventors have devised an embodiment of the present disclosure, prior toa specific description on each embodiment of the present disclosure.

As described earlier, an imaging device has employed, as an autofocusfunction, a method of detecting a phase difference, using a pair ofphase difference detection pixels 100 a and 100 b having asymmetricsensitivity with respect to incident angles of light beams. For example,Patent Literature 1 actualizes phase difference detection pixels asfollows. That is, phase difference detection pixels 100 a and 100 brespectively include divided lower electrodes 302 b, and have lightreceiving surfaces of asymmetric shapes with respect to incident anglesof light beams. Alternatively, the phase difference detection pixels 100a and 100 b are also actualized by, for example, providing lightshielding films so as to respectively cover halves of the lightreceiving surfaces. More specifically, the light shielding films areprovided at symmetrical positions in the respective light receivingsurfaces of the phase difference detection pixels 100 a and 100 bprovided in a pair, so as to cover halves of the light receivingsurfaces. Such phase difference detection pixels 100 a and 100 b aredisclosed in, for example, Patent Literature 1.

For example, a study is conducted on a case of changing the shapes oflower electrodes 302 b to actualize phase difference detection pixels100 a and 100 b, in a stacked structure including three PDs 200, 202,and 204 that absorb light beams different in wavelength from oneanother, as in the solid-state imaging element 1 illustrated in FIG. 2.In such a case, the PD 200 of the phase difference detection pixels 100a and 100 b is capable of detecting a phase difference. In addition, thePDs 202 and 204 located on the lower side of each of the phasedifference detection pixels 100 a and 100 b are capable of exertingfunctions as in PDs 202 and 204 of a normal pixel 100 x. However, inthis case, unnecessary electrical charges are generated upon detectionof a phase difference in the phase difference detection pixels 100 a and100 b; therefore, it is necessary to provide a mechanism (e.g., a plugor the like) for discharging the unnecessary electrical charges, whichimposes limitations on miniaturization of the solid-state imagingelement 1.

On the other hand, in the case of the phase difference detection pixels100 a and 100 b each provided with a light shielding film, it isunnecessary to provide a mechanism for discharging electrical charges.However, the PDs 202 and 204 located on the lower side of each of thephase difference detection pixels 100 a and 100 b are lower in amount ofreceived light beams than the PDs 202 and 204 of the normal pixel 100 xbecause of the presence of the light shielding films. As a result, thePDs 202 and 204 located on the lower side of each of the phasedifference detection pixels 100 a and 100 b are incapable of exertingfunctions as in the PDs 202 and 204 of the normal pixel 100 x providedwith no light shielding film. In the solid-state imaging element 1,consequently, the number of photodiodes functioning as a photodiode of anormal pixel is reduced because of the presence of phase differencedetection pixels 100 a and 100 b, which causes reduction in quality(such as resolution) of a captured image. In addition, if a light beamthat is reflected by a light shielding film travels an unintendedoptical path, unnecessary electrical charges are occasionally generatedat the PD 200 and the like of each of the phase difference detectionpixels 100 a and 100 b. In this case, there is a possibility that theelectrical charges may spread on surrounding pixels to exert adverseeffects on the surrounding pixels (for example, to cause blooming or thelike at the surrounding pixels).

In view of the situation described above, hence, the present inventorshave devised such an embodiment of the present disclosure as toactualize phase difference detection pixels 100 a and 100 b that enablea finer pattern of pixels and also enable improvement in quality of acaptured image in a stacked structure including a plurality ofphotodiodes (PDs 200, 202, and 204) in a longitudinal direction.Specifically, an embodiment of the present disclosure actualizes phasedifference detection pixels 100 a and 100 b that enable a finer patternof pixels and also enable improvement in quality of a captured image, byproviding a color filter that absorbs a light beam with a specificwavelength in the foregoing stacked structure. In the following,embodiments of the present disclosure will be successively described indetail.

4. FIRST EMBODIMENT 4.1 Specific Configurations of Phase DifferenceDetection Pixels

With reference to FIGS. 3 and 4, first, a description will be given ofspecific configurations of phase difference detection pixels 100 a and100 b according to a first embodiment of the present disclosure. FIG. 3is an explanatory view illustrating exemplary sectional configurationsof the phase difference detection pixels 100 a and 100 b according tothe present embodiment. Specifically, the exemplary sectionalconfigurations correspond to a section of a phase difference detectionpixel 100 a, a section of a normal pixel 100 x, and a section of a phasedifference detection pixel 100 b, the pixels being cut along a thicknessdirection of a semiconductor substrate 10. In FIG. 3, an arrow 800indicated by a solid line represents an optical path of a green lightbeam, an arrow 802 indicated by a broken line represents an optical pathof a blue light beam, and an arrow 804 indicated by a chain linerepresents an optical path of a red light beam. FIG. 4 is an explanatoryview illustrating an exemplary planar configuration of a pixel arraypart 30 according to the present embodiment. Specifically, FIG. 4illustrates a part of the pixel array part 30 in a solid-state imagingelement 1 with the semiconductor substrate 10 seen from above. FIG. 4does not illustrate a high refractive index layer 500 and on-chip lenses502 each provided above the semiconductor substrate 10, for the purposeof easily understanding positions of color filters 600 to be describedlater. In FIG. 4, moreover, a region indicated by a broken linerepresents one pixel.

As illustrated in FIG. 3, the phase difference detection pixels 100 aand 100 b are almost similar in stacked structure to the normal pixel100 x described earlier, except for color filters 600 provided on anupper electrode 302 a. Specifically, the phase difference detectionpixel 100 a includes a color filter 600 having a rectangular shape. Thecolor filter 600 is provided on the upper electrode 302 a so as to coverright half of a light receiving surface of the phase differencedetection pixel 100 a. The phase difference detection pixel 100 b alsoincludes a color filter 600 having a rectangular shape. The color filter600 is provided on the upper electrode 302 a so as to cover left half ofa light receiving surface of the phase difference detection pixel 100 b.In other words, the phase difference detection pixels 100 a and 100 bare different from each other as to a position of a color filter 600 ina light receiving surface. The phase difference detection pixels 100 aand 100 b operate in a pair to detect a phase difference. It should benoted that a light receiving surface used herein refers to a surface,where stacked PDs 200, 202, and 204 receive light, of each of the normalpixel 100 x, the phase difference detection pixel 100 a, and the phasedifference detection pixel 100 b with the semiconductor substrate 10seen from above. More specifically, a light receiving surfacecorresponds to a region where a pixel indicated by a broken line in theplan view of FIG. 4 is formed. In particular, as to a PD 200, a lightreceiving surface corresponds to a surface defined by a lower electrode302 b.

It should be noted in the present embodiment that each of the colorfilters 600 is not limited to such a configuration that each colorfilter 600 is formed to cover half of the corresponding light receivingsurface. As illustrated in FIG. 4, for example, each color filter 600may be formed such that a center point 604 on the center of a plane ofthe color filter 600 is different in position from an optical axis 504of the corresponding on-chip lens 502. That is, in the presentembodiment, each color filter 600 may be provided to cover a part of thecorresponding light receiving surface. In the present embodiment,preferably, each color filter 600 is a rectangular color filter havingan area that is one-half of an area of the corresponding light receivingsurface. However, the area of each color filter 600 is allowable evenwhen it is somewhat different from one-half of the area of thecorresponding light receiving surface. In addition, as illustrated inFIG. 4, the pixel array part 30 may have a plurality of phase differencedetection pixels 100 a and 100 b provided in a pair.

As illustrated in FIGS. 3 and 4, phase difference detection pixels 100 aand 100 b provided in a pair may be juxtaposed to each other with one ormore normal pixels 100 x interposed therebetween or may be juxtaposed toeach other with no normal pixel 100 x interposed therebetween (see FIG.9).

Each color filter 600 is a color filter (a magenta filter) that absorbsa green light beam. That is, each color filter 600 is capable ofabsorbing a light beam that is equal in wavelength to a light beam to beabsorbed by the PD 200. Specifically, each color filter 600 may beformed from, for example, a resin material containing a rhodamine dye, amelocyanine dye, a quinacridone derivative, a subphthalocyanine dye (asubphthalocyanine derivative), or the like.

When the color filters 600 are provided as described above, the phasedifference detection pixels 100 a and 100 b are formed to haveasymmetric sensitivity with respect to incident angles of green lightbeams 800. In addition, since the phase difference detection pixels 100a and 100 b are different in sensitivity from each other with respect toincident angles of green light beams 800, a phase shift occurs betweenan image detected by the phase difference detection pixel 100 a and animage detected by the phase difference detection pixel 100 b. Accordingto the present embodiment, therefore, the PD 200 that receives andphotoelectrically converts the green light beams 800 is capable ofdetecting a phase difference. Moreover, the color filters 600 preventlight beams unnecessary for detection of the phase difference fromentering the PD 200 of the phase difference detection pixels 100 a and100 b; therefore, unnecessary electrical charges are not generated upondetection of the phase difference. According to the present embodiment,therefore, it is unnecessary to provide a mechanism for dischargingunnecessary electrical charges, which leads to further miniaturizationof the solid-state imaging element 1.

As illustrated in FIG. 3, in addition, each color filter 600 allowstransmission of a blue light beam 802 and a red light beam 804.Accordingly, the PDs 202 and 204 of each of the phase differencedetection pixels 100 a and 100 b are capable of detecting the blue lightbeam 802 and the red light beam 804 as in the PDs 202 and 204 of thenormal pixel 100 x. Therefore, the PDs 202 and 204 of each of the phasedifference detection pixels 100 a and 100 b can be used as in the PDs202 and 204 of the normal pixel 100 x. That is, according to the presentembodiment, the PDs 202 and 204 of each of the phase differencedetection pixels 100 a and 100 b are capable of functioning as the PDs202 and 204 of the normal pixel 100 x, which avoids decrease in quality(such as resolution) of a captured image. According to the presentembodiment, furthermore, since a light shielding film is not provided,there is no possibility that unnecessary electrical charges aregenerated due to reflection by the light shielding film and spread onsurrounding pixels to exert adverse effects on the surrounding pixels.

As illustrated in FIG. 4, on the pixel array part 30, the phasedifference detection pixels 100 a and 100 b are juxtaposed to each otherin the horizontal direction (the left-right direction in the figure)with the normal pixel 100 x interposed therebetween. In addition, asdescribed earlier, in the phase difference detection pixel 100 a, thecolor filter 600 is provided on the upper electrode 302 a so as to coverright half of the light receiving surface of the phase differencedetection pixel 100 a. On the other hand, in the phase differencedetection pixel 100 b, the color filter 600 is provided on the upperelectrode 302 a so as to cover left half of the light receiving surfaceof the phase difference detection pixel 100 b. It can be said that thephase difference detection pixels 100 a and 100 b provided in a pair arejuxtaposed to each other in the horizontal direction and respectivelyhave the color filters 600 provided to cover the halves of the lightreceiving surfaces in the horizontal direction; therefore, the phasedifference detection pixels 100 a and 100 b have high sensitivity fordetection of a phase difference in the horizontal direction.

Preferably, the pixel array part 30 has a large number of normal pixels100 x in order to achieve a higher resolution of a captured image.However, if the number of phase difference detection pixels 100 a and100 b is reduced, autofocusing loses accuracy or an autofocusing speedbecomes slow. It is therefore preferable that the number of phasedifference detection pixels 100 a and 100 b on the pixel array part 30,the positions of the phase difference detection pixels 100 a and 100 bformed on the pixel array part 30, and the like are appropriatelyselected in consideration of the balance between the resolution and theaccuracy of autofocusing, and the like.

As described above, according to the present embodiment, it is possibleto actualize the phase difference detection pixels 100 a and 100 b thatenable a finer pattern of pixels and also enable improvement in qualityof a captured image in the stacked structure including the PDs 200, 202,and 204.

4.2 Modifications

With reference to FIGS. 5 to 10, next, a description will be given ofModifications 1 to 5 of the present embodiment. FIGS. 5 to 10 areexplanatory views respectively illustrating exemplary planarconfigurations of pixel array parts 30 according to Modifications 1 to 5of the present embodiment. It should be noted that FIGS. 5 to 10 do notillustrate a high refractive index layer 500 and on-chip lenses 502 eachprovided above a semiconductor substrate 10, for the purpose of easilyunderstanding positions of color filters 600, as in FIG. 4.

Modification 1

As illustrated in FIG. 5, according to Modification 1, on the pixelarray part 30, phase difference detection pixels 100 a and 100 bprovided in a pair may be juxtaposed to each other in the verticaldirection (the upper-lower direction in the figure) with a plurality ofnormal pixels 100 x interposed therebetween. As illustrated in FIG. 5,in the phase difference detection pixel 100 a, a color filter 600 isprovided on an upper electrode 302 a so as to cover right half of alight receiving surface of the phase difference detection pixel 100 a,as in the first embodiment. In the phase difference detection pixel 100b, a color filter 600 is provided on the upper electrode 302 a so as tocover left half of a light receiving surface of the phase differencedetection pixel 100 b.

Modification 2

According to Modification 2, color filters 600 may be respectivelyprovided to cover upper halves or lower halves of light receivingsurfaces of phase difference detection pixels 100 a and 100 b. Asillustrated in FIG. 6, specifically, in the phase difference detectionpixel 100 a, the color filter 600 is provided on an upper electrode 302a so as to cover upper half of the light receiving surface of the phasedifference detection pixel 100 a. In the phase difference detectionpixel 100 b, the color filter 600 is provided on the upper electrode 302a so as to cover lower half of the light receiving surface of the phasedifference detection pixel 100 b. As illustrated in FIG. 6, according tothe present modification, on the pixel array part 30, phase differencedetection pixels 100 a and 100 b provided in a pair may be juxtaposed toeach other in the vertical direction (the upper-lower direction in thefigure) with a plurality of normal pixels 100 x interposed therebetween.It can be said that the phase difference detection pixels 100 a and 100b provided in a pair are juxtaposed to each other in the verticaldirection and respectively have the color filters 600 covering thehalves of the light receiving surfaces in the vertical direction;therefore, the phase difference detection pixels 100 a and 100 b havehigh sensitivity for detection of a phase difference in the verticaldirection.

Modification 3

According to Modification 3, as in Modification 2, in a phase differencedetection pixel 100 a, a color filter 600 is provided to cover upperhalf of a light receiving surface of the phase difference detectionpixel 100 a. In a phase difference detection pixel 100 b, a color filter600 is provided to cover left half of a light receiving surface of thephase difference detection pixel 100 b. According to the presentmodification, in addition, on the pixel array part 30, phase differencedetection pixels 100 a and 100 b provided in a pair are juxtaposed toeach other in the vertical direction (the upper-lower direction in thefigure) with a plurality of normal pixels 100 x interposed therebetween.However, Modification 3 is different from Modification 2 illustrated inFIG. 6 as to a positional relationship between a phase differencedetection pixel 100 a and a phase difference detection pixel 100 b. Asillustrated in FIG. 7, specifically, according to the presentmodification, a pair of phase difference detection pixels 100 a and 100b provided in such a positional relationship that the phase differencedetection pixel 100 a is located on the upper side in the figure withrespect to the phase difference detection pixel 100 b and a pair ofphase difference detection pixels 100 a and 100 b provided in such apositional relationship that the phase difference detection pixel 100 ais located on the lower side in the figure with respect to the phasedifference detection pixel 100 b are arranged in a mixed state.

That is, as described in the first embodiment as well as Modifications 1to 3, the color filters 600 of the phase difference detection pixels 100a and 100 b may be respectively provided to cover the left and righthalves of the light receiving surfaces or may be respectively providedto cover the upper and lower halves of the light receiving surfaces. Inaddition, a positional relationship between a phase difference detectionpixel 100 a and a phase difference detection pixel 100 b provided in apair is not particularly limited. On the pixel array part 30, the phasedifference detection pixels 100 a and 100 b may be juxtaposed to eachother in the horizontal direction (the left-right direction in thefigure) or may be juxtaposed to each other in the vertical direction(the upper-lower direction in the figure). As described earlier,moreover, phase difference detection pixels 100 a and 100 b provided ina pair may be juxtaposed to each other with one or more normal pixels100 x interposed therebetween or may be juxtaposed to each other with nonormal pixel 100 x interposed therebetween.

Modification 4

According to the first embodiment as well as Modifications 1 to 3, eachcolor filter 600 is a rectangular color filter covering the left orright half of the corresponding light receiving surface or covering theupper or lower half of the corresponding light receiving surface.According to an embodiment of the present disclosure, however, the shapeof each color filter 600 is not limited thereto. Each color filter 600may be a triangular color filter covering diagonal half of a lightreceiving surface. As illustrated in FIG. 8, specifically, according tothe present modification, in a phase difference detection pixel 100 a, acolor filter 600 is provided to cover upper diagonal half of a lightreceiving surface of the phase difference detection pixel 100 a. In aphase difference detection pixel 100 b, a color filter 600 is providedto cover lower diagonal half of a light receiving surface of the phasedifference detection pixel 100 b. According to the present modification,in addition, on the pixel array part 30, phase difference detectionpixels 100 a and 100 b provided in a pair are juxtaposed to each otherin the vertical direction (the upper-lower direction in the figure) witha plurality of normal pixels 100 x interposed therebetween.

Modification 5

According to the first embodiment as well as Modifications 1 to 4, phasedifference detection pixels 100 a and 100 b provided in a pair arejuxtaposed to each other with one or more normal pixels 100 x interposedtherebetween. According to an embodiment of the present disclosure,however, phase difference detection pixels 100 a and 100 b provided in apair may be juxtaposed to each other with no normal pixel 100 xinterposed therebetween. In such a case, furthermore, color filters 600of the phase difference detection pixels 100 a and 100 b provided in apair may be connected to each other and integrated into one. Accordingto the present modification, the integrated color filter 600 achievesimprovement in accuracy and reduction in time in processing the colorfilter 600.

As illustrated in FIG. 9, specifically, according to the presentmodification, on the pixel array part 30, phase difference detectionpixels 100 a and 100 b provided in a pair are juxtaposed to each otherin the vertical direction (the upper-lower direction in the figure) withno normal pixel 100 x interposed therebetween. In addition, in the phasedifference detection pixel 100 a, a color filter 600 covers upper halfof a light receiving surface of the phase difference detection pixel 100a. In the phase difference detection pixel 100 b, a color filter 600covers lower half of a light receiving surface of the phase differencedetection pixel 100 b.

In the case where the phase difference detection pixels 100 a and 100 bprovided in a pair are juxtaposed to each other with no normal pixel 100x interposed therebetween, as illustrated in FIG. 10, color filters 600of the phase difference detection pixels 100 a and 100 b provided in apair may be connected to each other and integrated into one. That is,according to the present modification, a color filter 600 may beprovided to cover upper half of the light receiving surface of the phasedifference detection pixel 100 a and lower half of the light receivingsurface of the phase difference detection pixel 100 b.

5. SECOND EMBODIMENT

According to the first embodiment, color filters 600 that absorb greenlight beams allow phase difference detection pixels 100 a and 100 b todetect a phase difference based on green light beams 800. However, anembodiment of the present disclosure is not limited to a phasedifference detection pixel that detects a phase based on a green lightbeam 800. For example, an embodiment of the present disclosure mayemploy a phase difference detection pixel that detects a phasedifference based on a blue light beam 802 or a phase differencedetection pixel that detects a phase difference based on a red lightbeam 804. With reference to FIGS. 11 to 13, hereinafter, a descriptionwill be given of a second embodiment of the present disclosure.According to the second embodiment, a phase difference is detected onthe basis of a blue light beam 802 or a red light beam 804. FIGS. 11 and12 are explanatory views each illustrating exemplary sectionalconfigurations of phase difference detection pixels 100 a and 100 baccording to the present embodiment. Specifically, the exemplarysectional configurations correspond to a section of a phase differencedetection pixel 100 a, a section of a normal pixel 100 x, and a sectionof a phase difference detection pixel 100 b, the pixels being cut alonga thickness direction of a semiconductor substrate 10. In FIGS. 11 and12, as in FIG. 3, an arrow 800 indicated by a solid line represents anoptical path of a green light beam, an arrow 802 indicated by a brokenline represents an optical path of a blue light beam, and an arrow 804indicated by a chain line represents an optical path of a red lightbeam. FIG. 13 is an explanatory view illustrating an exemplary planarconfiguration of a pixel array part 30 according to the presentembodiment. It should be noted that FIG. 13 does not illustrate a highrefractive index layer 500 and on-chip lenses 502 each provided above asemiconductor substrate 10, for the purpose of easily understandingpositions of color filters 600 a and 600 b, as in FIG. 4.

<5.1 Specific Configurations of Phase Difference Detection PixelsDetecting Phase Difference Based on Blue Light Beams>

With reference to FIG. 11, first, a description will be given of phasedifference detection pixels 100 a and 100 b that detect a phasedifference based on blue light beams 802. As illustrated in FIG. 11,each of the phase difference detection pixels 100 a and 100 b accordingto the present embodiment is similar in stacked structure to each of thephase difference detection pixels 100 a and 100 b according to the firstembodiment illustrated in FIG. 3. However, color filters 600 a aredifferent from the color filters according to the first embodiment. Eachcolor filter 600 a is a color filter (a yellow filter) that absorbs ablue light beam 802. That is, each color filter 600 a is capable ofabsorbing a light beam that is equal in wavelength to a light beam to beabsorbed by a PD 202. Specifically, each color filter 600 a may beformed from, for example, a resin material containing a coumaric aciddye, tris-8-hydroxyquinoline aluminum (Alq3), a melocyanine dye, or thelike.

As described above, the color filters 600 a that absorb blue light beams802 allow the phase difference detection pixels 100 a and 100 b todetect a phase difference at the PDs 202 that receive andphotoelectrically convert blue light beams 802. As illustrated in FIG.11, in addition, each color filter 600 a allows transmission of a greenlight beam 800 and a red light beam 804. Accordingly, PDs 200 and 204 ofeach of the phase difference detection pixels 100 a and 100 b arecapable of detecting the green light beam 800 and the red light beam 804as in PDs 200 and 204 of a normal pixel 100 x. Therefore, the PDs 200and 204 of each of the phase difference detection pixels 100 a and 100 bcan be used as in the PDs 200 and 204 of the normal pixel 100 x.

<5.2 Specific Configurations of Phase Difference Detection PixelsDetecting Phase Difference Based on Red Light Beams>

With reference to FIG. 12, next, a description will be given of phasedifference detection pixels 100 a and 100 b that detect a phasedifference based on red light beams 804. As illustrated in FIG. 12, eachof the phase difference detection pixels 100 a and 100 b according tothe present embodiment is also similar in stacked structure to each ofthe phase difference detection pixels 100 a and 100 b according to thefirst embodiment illustrated in FIG. 3. However, color filters 600 b aredifferent from the color filters according to the first embodiment. Eachcolor filter 600 b is a color filter (a cyan filter) that absorbs a redlight beam 804. That is, each color filter 600 b is capable of absorbinga light beam that is equal in wavelength to a light beam to be absorbedby a PD 204. Specifically, each color filter 600 b may be formed from,for example, a resin material containing a phthalocyanine dye, asubphthalocyanine dye (a subphthalocyanine derivative), or the like.

As described above, the color filters 600 b that absorb red light beams804 allow the phase difference detection pixels 100 a and 100 b todetect a phase difference at PDs 202 that receive and photoelectricallyconvert the red light beams 804. As illustrated in FIG. 12, in addition,each color filter 600 b allows transmission of a green light beam 800and a blue light beam 802. Accordingly, PDs 200 and 202 of each of thephase difference detection pixels 100 a and 100 b are capable ofdetecting the green light beam 800 and the blue light beam 802 as in PDs200 and 202 of a normal pixel 100 x. Therefore, the PDs 200 and 202 ofeach of the phase difference detection pixels 100 a and 100 b can beused as in the PDs 200 and 202 of the normal pixel 100 x.

<5.3 Mixed Phase Difference Detection Pixels Detecting Phase DifferencesBased on Light Beams of Different Colors>

In the first and second embodiments, phase difference detection pixels100 a and 100 b detect a phase difference based on one of a green lightbeam 800, a blue light beam 802, and a red light beam 804, that is,detect a phase difference based on a light beam of a single color.However, an embodiment of the present disclosure is limited to detectionof a phase difference based on a light beam of a single color. Forexample, an embodiment of the present disclosure may employ acombination of phase difference detection pixels 100 a and 100 b thatrespectively detect phase differences based on light beams of threecolors. This configuration enables detection of phase differences inaccordance with various light sources and subjects in imaging scenes.

As illustrated in FIG. 13, on a pixel array part 30, phase differencedetection pixels 100 a and 100 b provided in a pair are juxtaposed toeach other in the vertical direction (the upper-lower direction in thefigure) with a normal pixel 100 x interposed therebetween. Specifically,phase difference detection pixels 100 a and 100 b provided in a pair atthe center of FIG. 13 each include a color filter 600, that is, functionas phase difference detection pixels that are provided in a pair anddetect a phase difference based on green light beams 800. Moreover,phase difference detection pixels 100 a and 100 b provided in a pair onthe left side of FIG. 13 each include a color filter 600 a, that is,function as phase difference detection pixels that are provided in apair and detect a phase difference based on blue light beams 802. Inaddition, phase difference detection pixels 100 a and 100 b provided ina pair on the right side of FIG. 13 each include a color filter 600 b,that is, function as phase difference detection pixels that are providedin a pair and detect a phase difference based on red light beams 804. Asdescribed above, one pixel array part 30 has a pair of phase differencedetection pixels 100 a and 100 b that detect a phase difference based onlight beams 800, a pair of phase difference detection pixels 100 a and100 b that detect a phase difference based on light beams 802, and apair of phase difference detection pixels 100 a and 100 b that detect aphase difference based on light beams 804, the light beams 800, 802, and804 being different in color from one another. This configurationenables detection of phase differences based on light beams of threecolors. Therefore, the example illustrated in FIG. 13 enables detectionof a phase difference with higher accuracy in accordance with variouslight sources and subjects in imaging scenes, as compared with detectionof a phase difference based on light beams of a single color.

As described above, according to the present embodiment, it is possibleto actualize phase difference detection pixels 100 a and 100 b thatenable a finer pattern of pixels, enable improvement in quality of acaptured image, and also enable detection of phase differences based onthree light beams 800, 802, and 804 different in wavelength (color) fromone another. Preferably, phase difference detection pixels 100 a and 100b that detect phase differences based on three light beams different inwavelength from one another are arranged in consideration of an array ofnormal pixels 100 x arranged on the pixel array part 30 in accordancewith the Bayer arrangement or the like.

6. THIRD EMBODIMENT

In the case where phase difference detection pixels 100 a and 100 bdetect a phase difference based on blue light beams 802 or red lightbeams 804 as described in the second embodiment, color filters 600 a or600 b are not necessarily provided on an upper electrode 302 a. Morespecifically, the color filters 600 a or 600 b may be respectivelyprovided blow lower electrodes 302 b. With reference to FIG. 14,hereinafter, a description will be given of a third embodiment of thepresent disclosure. According to the third embodiment, a color filter600 a is provided below a lower electrode 302 b. FIG. 14 is anexplanatory view illustrating exemplary sectional configurations ofphase difference detection pixels 100 a and 100 b according to thepresent embodiment. Specifically, the exemplary sectional configurationscorrespond to a section of a phase difference detection pixel 100 a, asection of a normal pixel 100 x, and a section of a phase differencedetection pixel 100 b, the pixels being cut along a thickness directionof a semiconductor substrate 10. In FIG. 14, as in FIG. 3, an arrow 800indicated by a solid line represents an optical path of a green lightbeam, an arrow 802 indicated by a broken line represents an optical pathof a blue light beam, and an arrow 804 indicated by a chain linerepresents an optical path of a red light beam.

As illustrated in FIG. 14, each of the phase difference detection pixels100 a and 100 b according to the present embodiment is also almostsimilar in stacked structure to each of the phase difference detectionpixels 100 a and 100 b according to each of the first embodimentillustrated in FIG. 3 and the second embodiment. However, color filters600 a are different from the color filters according to the secondembodiment, and are provided below lower electrodes 302 b and on anupper face of a semiconductor substrate 10. That is, in the presentembodiment, each color filter 600 a is provided to cover half of anupper face of a corresponding one of PDs 202. In other words, the colorfilter 600 a is provided to cover half of a light receiving surface ofthe PD 202. It should be noted that each color filter 600 a is a colorfilter that absorbs a blue light beam 802.

As described above, the color filters 600 a that absorb blue light beams802 and are provided below the lower electrodes 302 b and on the upperface of the semiconductor substrate 10 allow the phase differencedetection pixels 100 a and 100 b to detect a phase difference at the PDs202 that receive and photoelectrically convert blue light beams 802. Asillustrated in FIG. 14, moreover, each color filter 600 a allowstransmission of a red light beam 804. Therefore, PDs 204 of the phasedifference detection pixels 100 a and 100 b are capable of detecting redlight beams 804 and red light beams 804 as in a PD 204 of a normal pixel100 x.

It should be noted in the present embodiment that the color filters 600a illustrated in FIG. 14 may be replaced with color filters 600 b thatabsorb red light beams 804. In this case, phase difference detectionpixels 100 a and 100 b are capable of detecting a phase difference atthe PDs 204 that receive and electrically convert red light beams 804.

That is, an embodiment of the present disclosure is not particularlylimited as to a color of a light beam for detection of a phasedifference. In addition, a type of a color filter 600 and a position ofa color filter 600 are appropriately selectable in accordance with adesired phase difference detection light beam. Table 1 shows acombination of a type of a phase difference detection light beam, a typeof a color filter 600 corresponding to a phase difference detectionlight beam, and a position of a color filter 600, in the presentembodiment.

TABLE 1 Type of color filter Above upper Below lower Position of colorfilter electrode electrode Phase Green light Green light — differencebeam beam absorption detection type light beam Blue light Blue lightBlue light beam beam absorption beam absorption type type Red light Redlight Red light beam beam absorption beam absorption type type

As described above, according to the present embodiment, it is possibleto actualize the phase difference detection pixels 100 a and 100 b thatenable a finer pattern of pixels and also enable improvement in qualityof a captured image even when a position of a color filter 600 differs.

7. FOURTH EMBODIMENT

The solid-state imaging element 1 according to an embodiment of thepresent disclosure is not limited to such a form that the floatingdiffusion part temporarily holds electrical charges subjected tophotoelectric conversion by the photoelectric conversion film 300, butmay employ such a form that the photoelectric conversion film 300temporarily holds the electrical charges.

With reference to FIG. 15, hereinafter, a description will be given of afourth embodiment of the present disclosure. FIG. 15 is an explanatoryview illustrating exemplary sectional configurations of phase differencedetection pixels 100 a and 100 b according to the present embodiment.Specifically, the exemplary sectional configurations correspond to asection of a phase difference detection pixel 100 a, a section of anormal pixel 100 x, and a section of a phase difference detection pixel100 b, the pixels being cut along a thickness direction of asemiconductor substrate 10. In FIG. 15, as in FIG. 3, an arrow 800indicated by a solid line represents an optical path of a green lightbeam, an arrow 802 indicated by a broken line represents an optical pathof a blue light beam, and an arrow 804 indicated by a chain linerepresents an optical path of a red light beam.

As illustrated in FIG. 15, according to the present embodiment, thenormal pixel 100 x, the phase difference detection pixel 100 a, and thephase difference detection pixel 100 b each include a lower electrode302 b divided into a lower electrode 302 b-1 and a lower electrode 302b-2. It should be noted in the present embodiment that each lowerelectrode 302 b is not necessarily divided into two, and may be dividedinto at least two. Specifically, in each of the phase differencedetection pixels 100 a and 100 b, for example, the lower electrode 302b-1 is formed to have an area smaller than an area of the lowerelectrode 302 b-2. Also in the normal pixel 100 x, likewise, the lowerelectrode 302 b-1 is formed to have an area smaller than an area of thelower electrode 302 b-2. In addition, these lower electrodes 302 b-2face a photoelectric conversion film 300 across an insulating film 304.

In the normal pixel 100 x, moreover, the lower electrode 302 b-2 isconnected to a wire (not illustrated) to receive a desired electricalpotential through the wire. The lower electrode 302 b-1 is alsoconnected to a wire (not illustrated) to receive a desired electricalpotential through the wire. In addition, the lower electrode 302 b-1 isconnected to a floating diffusion part (not illustrated) provided on asemiconductor substrate 10, via a plug (not illustrated) or the like. Inthe present embodiment, controlling an electrical potential to beapplied to the lower electrode 302 b-1 and an electrical potential to beapplied to the lower electrode 302 b-2 enables accumulation ofelectrical charges, which are generated at the photoelectric conversionfilm 300, in the photoelectric conversion film 300 or enables output ofthe electrical charges to the floating diffusion part. In other words,the lower electrode 302 b-2 functions as an electrical chargeaccumulating electrode that attracts electrical charges generated at thephotoelectric conversion film 300 and causes the photoelectricconversion film 300 to accumulate the electrical charges, in accordancewith an electrical potential to be applied thereto.

Examples of a material for the insulating film 304 may include not onlyinorganic insulating materials, for example, a silicon oxide material;silicon nitride (SiNy); and a metal oxide high dielectric insulatingmaterial such as aluminum oxide (Al2O3), but also organic insulatingmaterials (organic polymers), for example, polymethyl methacrylate(PMMA); polyvinylphenol (PVP); polyvinyl alcohol (PVA); polyimide;polycarbonate (PC); polyethylene terephthalate (PET); polystyrene;silanol derivatives (silane coupling agents) such as N-2(aminoethyl)3-aminopropyltrimethoxysilane (AEAPTMS),3-mercaptopropyltrimethoxysilane (MPTMS), and octadecyltrichlorosilane(OTS); a novolac-type phenol resin; a fluororesin; and linearhydrocarbons, each having at its one end a functional group bondable toa control electrode, such as octadecane thiol and dodecyl isocyanate. Inaddition, in the present embodiment, these materials may be used incombinations. Examples of the silicon oxide material may include siliconoxide (SiOX), BPSG, PSG, BSG, AsSG, PbSG, silicon oxynitride (SiON),spin-on-glass (SOG), and a low-dielectric constant material (e.g.,polyaryl ether, cycloperfluorocarbon polymer and benzocyclobutene,cyclic fluororesin, polytetrafluoroethylene, fluorinated aryl ether,fluorinated polyimide, amorphous carbon, organic SOG).

A specific description will be further given of the phase differencedetection pixels 100 a and 100 b illustrated in FIG. 15. Also in thepresent embodiment, the phase difference detection pixels 100 a and 100b are similar in structure to the foregoing normal pixel 100 x. Inaddition, each of the phase difference detection pixels 100 a and 100 bincludes a color filter 600 covering a part of a light receiving surfacethereof, as in the phase difference detection pixels 100 a and 100 baccording to the foregoing embodiments. In each of the phase differencedetection pixels 100 a and 100 b, therefore, a portion of thephotoelectric conversion film 300, which is not covered with the colorfilter 600, is capable of absorbing a green light beam 800, therebygenerating electrical charges. The electrical charges thus generated canbe accumulated in the photoelectric conversion film 300 or output to theoutside in accordance with an electrical potential to be applied to thecorresponding lower electrode 302 b-1 and an electrical potential to beapplied to the corresponding lower electrode 302 b-2, as in theforegoing normal pixel 100 x. Accordingly, the use of the electricalcharges enables detection of a phase difference.

On the other hand, a portion of the photoelectric conversion film 300,which is located below the color filter 600, is incapable of absorbing agreen light beam 800 because of the presence of the color filter 600,and is therefore incapable of generating electrical charges. Therefore,the phase difference detection pixel 100 a and the phase differencedetection pixel 100 b have asymmetric sensitivity with respect toincident angles of light beams since the positions of the color filters600 in the light receiving surfaces lean rightward or leftward in thefigure. In addition, since the phase difference detection pixels 100 aand 100 b are different in sensitivity from each other with respect toincident angles of green light beams 800, a phase difference occursbetween an image detected by the phase difference detection pixel 100 aand an image detected by the phase difference detection pixel 100 b. Asa result, also in the present embodiment, a pair of phase differencedetection pixels 100 a and 100 b is capable of detecting a phasedifference.

That is, according to the present embodiment, even in a solid-stateimaging element 1 that allows a photoelectric conversion film 300 totemporarily hold electrical charges, it is possible to actualize phasedifference detection pixels 100 a and 100 b in such a manner that colorfilters 600 are provided to partially cover light receiving surfaces ofthe phase difference detection pixels 100 a and 100 b. Also in each ofthe phase difference detection pixels 100 a and 100 b according to thepresent embodiment, the PDs 202 and 204 can be used as in the PDs 202and 204 of the normal pixel 100 x.

According to the present embodiment, therefore, it is possible toactualize phase difference detection pixels 100 a and 100 b that enableimprovement in quality of a captured image even in such a form that aphotoelectric conversion film 300 temporarily holds electrical charges.

8. FIFTH EMBODIMENT

According to an embodiment of the present disclosure, as describedabove, three PDs 200, 202, and 204 that absorb light beams different inwavelength from one another are stacked. However, an embodiment of thepresent disclosure is not limited to such a stacked structure includingthree PDs 200, 202, and 204. For example, an embodiment of the presentdisclosure may employ a stacked structure including two PDs 200 and 204.With reference to FIG. 16, hereinafter, a description will be given of afifth embodiment of the present disclosure. According to the fifthembodiment, two PDs 200 and 204 are stacked to constitute a stackedstructure. FIG. 16 is an explanatory view illustrating exemplarysectional configurations of phase difference detection pixels 100 a and100 b according to the present embodiment. Specifically, the exemplarysectional configurations correspond to a section of a phase differencedetection pixel 100 a, a section of a normal pixel 100 x, and a sectionof a phase difference detection pixel 100 b, the pixels being cut alonga thickness direction of a semiconductor substrate 10. In FIG. 16, as inFIG. 3, an arrow 800 indicated by a solid line represents an opticalpath of a green light beam, an arrow 802 indicated by a broken linerepresents an optical path of a blue light beam, and an arrow 804indicated by a chain line represents an optical path of a red lightbeam.

In the present embodiment, as illustrated in FIG. 16, phase differencedetection pixels 100 a and 100 b are almost similar in stacked structureto the foregoing phase difference detection pixels 100 a and 100 baccording to the first embodiment, except that only PDs 204 are providedin a semiconductor substrate 10. The phase difference detection pixels100 a and 100 b according to the present embodiment are also differentfrom those according to the first embodiment in that color filters 602are provided on the semiconductor substrate 10, that is, are provided toentirely cover light receiving surfaces of the PDs 204. In the exampleillustrated in FIG. 16, each PD 204 is a photodiode that receives andphotoelectrically converts a red light beam 804. Each color filter 602is a color filter (a yellow filter) that absorbs a blue light beam 802,as in the color filters 600 a according to the second embodiment. Inother words, the color filters 602 absorb light beams different inwavelength from light beams to be absorbed by the PDs 204 located belowthe color filters 602. In each of the phase difference detection pixels100 a and 100 b according to the present embodiment, therefore, a PD 200functions as a phase difference detection pixel that detects a phasedifference based on green light beams 800, and the PDs 204 function asnormal pixels that detect red light beams 804.

In the present embodiment, each color filter 602 may be a color filter(a cyan filter) that absorbs a red light beam 804, as in the colorfilters 600 b according to the second embodiment. In this case, aphotodiode to be provided in the semiconductor substrate 10 serves as aPD 202 that receives and photoelectrically converts a blue light beam.

As described above, a color filter 602 is provided near a PD 204 in astacked structure, which improves a segregation ratio in a capturedimage. It is however preferable that the respective layers in thestacked structure illustrated in FIG. 16 are formed to avoid applicationof high heat to the color filters 600 and 602 since heat tends to alterthe color filters 600 and 602.

9. SIXTH EMBODIMENT

With reference to FIGS. 17 to 19, hereinafter, a description will begiven of an absorption spectrum characteristic of a color filter 600according to an embodiment of the present disclosure, as a sixthembodiment of the present disclosure. FIGS. 17 to 19 are explanatoryviews each illustrating the present embodiment. Specifically, FIGS. 17to 19 each illustrate an absorption spectrum characteristic of a colorfilter 600 that absorbs a green light beam 800, with regard to awavelength. In each of the figures, a solid line represents an exemplaryabsorption spectrum characteristic of a color filter 600, and brokenlines respectively represent exemplary absorption spectrumcharacteristics of photodiodes 200, 202, and 204.

Specifically, in a case of phase difference detection pixels 100 a and100 b that detect a phase difference based on green light beams 800, asillustrated in FIG. 17, preferably, a wavelength of an absorption peakof a PD 200 that absorbs the green light beams 800 is substantiallyidentical to a wavelength of an absorption peak of color filters 600that respectively absorb the green light beams 800. Also preferably, anextension of the absorption peak of the PD 200 is substantiallyidentical to an extension of the absorption peak of the color filters600. This configuration ensures a segregation ratio of the respectivecolors in a preferable manner. In order to obtain the color filters 600having the absorption spectrum characteristic illustrated in FIG. 17,each color filter 600 is formed from a resin material containing a dyeidentical to a dye in the PD 200. That is, each color filter 600 isformed from, for example, a resin material containing a rhodamine dye, amelocyanine dye, a quinacridone derivative, a subphthalocyanine dye (asubphthalocyanine derivative), or the like.

As in the foregoing description, in a case of phase difference detectionpixels 100 a and 100 b that detect a phase difference based on bluelight beams 802, preferably, a wavelength of an absorption peak of PDs202 that respectively absorb the blue light beams 802 is substantiallyidentical to a wavelength of an absorption peak of color filters 600 athat respectively absorb the blue light beams 802. Also preferably, anextension of the absorption peak of the PDs 202 is substantiallyidentical to an extension of the absorption peak of the color filters600 a. In this case, each color filter 600 a is formed from a resinmaterial containing a dye identical to a dye in each PD 202. That is,each color filter 600 a is formed from, for example, a resin materialcontaining a coumaric acid dye, tris-8-hydroxyquinoline aluminum (Alq3),a melocyanine dye, or the like.

As in the foregoing description, in a case of phase difference detectionpixels 100 a and 100 b that detect a phase difference based on red lightbeams 804, preferably, a wavelength of an absorption peak of PDs 204that respectively absorb the red light beams 804 is substantiallyidentical to a wavelength of an absorption peak of color filters 600 bthat respectively absorb the red light beams 804. Also preferably, anextension of the absorption peak of the PDs 204 is substantiallyidentical to an extension of the absorption peak of the color filters600 b. In this case, each color filter 600 b is formed from a resinmaterial containing a dye identical to a dye in each PD 204. That is,each color filter 600 b is formed from, for example, a resin materialcontaining a phthalocyanine dye, a subphthalocyanine dye (asubphthalocyanine derivative), or the like.

In addition, absorption spectrum characteristics of PDs 202 and 204 in asemiconductor substrate 10 vary depending on degrees of tailing of anabsorption peak on a longer wavelength side and a shorter wavelengthside as to an absorption spectrum of color filters 600. As illustratedin FIG. 18, for example, in a case where the color filters 600 have awider absorption peak on a longer wavelength side and a shorterwavelength side, a PD 200 that detects a phase difference based on greenlight beams 800 is capable of detecting the phase difference withallowance of color deviation from green to a degree. However, since thecolor filters 600 absorb blue light beams 802 and red light beams 804 toa degree, color deviation is apt to occur at PDs 202 and 204 thatrespectively absorb the blue light beams 802 and the red light beams804. As a result, there is a possibility that the PDs 202 and 204 cannotbe used as in PDs 202 and 204 of a normal pixel 100 x.

As illustrated in FIG. 19, in contrast, in a case where the colorfilters 600 have a narrower absorption peak on the longer wavelengthside and the shorter wavelength side, the PDs 202 and 204 that absorbthe blue light beams 802 and red light beams 804 are capable ofsuppressing color deviation as in the PDs 202 and 204 of the normalpixel 100 x. However, the PD 200 that detects a phase difference basedon green light beams 800 has a poor segregation ratio.

That is, in an embodiment of the present disclosure, preferably, amaterial for a color filter 600 is appropriately selected for achievingboth of a preferable segregation ratio of a PD 200 that detects a phasedifference and preferable absorption spectrum characteristics of PDs 202and 204 provided in a semiconductor substrate 10.

10. SEVENTH EMBODIMENT

With reference to FIGS. 20 to 23, next, a description will be given of amethod for manufacturing the solid-state imaging element 1 according tothe first embodiment illustrated in FIG. 3. FIGS. 20 to 23 are sectionalviews each illustrating the method for manufacturing the solid-stateimaging element according to the first embodiment of the presentdisclosure.

As illustrated in FIG. 20, first, PDs 202 and 204 to be stacked, a plug(not illustrated), and the like are formed in a semiconductor region 12of a semiconductor substrate 10. Furthermore, a wiring layer 16including a plurality of pixel transistors (not illustrated) thatperform read and the like of electrical charges accumulated in the PDs202 and 204 and a plurality of wires 18 is formed on a lower face of thesemiconductor substrate 10.

Next, a laminated layer including a hafnium oxide film and a siliconoxide film each having a predetermined thickness is formed on an upperface of the semiconductor substrate 10. In addition, a plug may beformed to penetrate through the laminated layer in such a manner that anopening (not illustrated) is formed in the laminated layer bylithography, and the opening thus formed is filled with a metal materialsuch as tungsten, aluminum, or copper.

In addition, an upper face of the laminated layer is planarized bychemical mechanical polishing (CMP). For example, an ITO film is formedon the upper face, and is subjected to patterning. Lower electrodes 302b are thus formed.

Then, a silicon oxide film and the like are laminated on the lowerelectrodes 302 b and the laminated layer. The newly laminated film issubjected to, for example, CMP so as to have a thickness equal to thethickness of the lower electrodes 302 b. As a result, a transparentinsulating film 400 is formed.

Furthermore, a photoelectric conversion film 300 for photoelectricallyconverting a light beam in a green wavelength range is formed on thetransparent insulating film 400. Thereafter, for example, an ITO film isformed on the photoelectric conversion film 300. An upper electrode 302a is thus formed. A sectional configuration illustrated in FIG. 21 isthus formed.

Next, as illustrated in FIG. 22, a colored resin material that absorbs alight beam in a green wavelength range and contains, for example, arhodamine dye or the like is formed by spin coating or vapor depositionin a predetermined region on the upper electrode 302 a. Color filters600 are thus formed. In addition, each color filter 600 is subjected toexposure or dry etching, and is thus processed into a desired shape. Itshould be noted that the color filters 600 are not necessarily formedand processed by spin coating, exposure, and the like, but may be formedand processed by any method such as a printing method.

Furthermore, a nitride film and the like are formed on the upperelectrode 302 a and the color filters 600. A high refractive index layer500 is thus formed.

Next, a resin material is formed on the high refractive index layer 500,and is subjected to etching. A solid-state imaging element 1 accordingto the first embodiment can thus be obtained as illustrated in FIG. 23.It should be noted that the manufacturing method according to thepresent embodiment is not necessarily carried out in the describedorder, and the order may be appropriately changed. Furthermore, themanufacturing method according to the present embodiment may includeother steps. The manufacturing method according to the presentembodiment has only to include at least stacking a plurality of PDs 200,202, and 204 that respectively absorb light beams different inwavelength from one another to generate electrical charges, and forminga color filter 600 or 602 that partially covers an upper face of one ofthe foregoing PDs 200, 202, and 204 and absorbs a light beam with aspecific wavelength.

It should be noted that examples of the method of forming the foregoingrespective layers may include a physical vapor deposition (PVD) methodand a chemical vapor deposition (CVD) method. Examples of the PVD methodmay include a vacuum vapor deposition method, an electron beam (EB)vapor deposition method, various sputtering methods (a magnetronsputtering method, an RF-DC coupled bias sputtering method, an electroncyclotron resonance (ECR) sputtering method, a counter target sputteringmethod, a high-frequency sputtering method, and the like), an ionplating method, a laser ablation method, a molecular beam epitaxy method(an MBE method), and a laser transfer method. Moreover, examples of theCVD method may include a plasma CVD method, a thermal CVD method, ametal organic (MO) CVD method, and a photo CVD method. Furthermore,examples of the other methods may include an electroplating method, anelectroless plating method, a spin coating method, an inkjet method, aspray coating method, a stamping method, a microcontact printing method,a flexographic printing method, an offset printing method, a gravureprinting method, a dipping method, and the like. Furthermore, examplesof the method of patterning the respective layers may include chemicaletching such as shadow mask, laser transfer, and photolithography, andphysical etching using ultraviolet rays, laser, and the like. Moreover,examples of the CVD method may include a plasma CVD method, a thermalCVD method, an MOCVD method, and a photo CVD method.

Examples of still other methods may include a spin coating method; adipping method; a casting method; a microcontact printing method; a dropcasting method; various printing methods such as a screen printingmethod, an inkjet printing method, an offset printing method, a gravureprinting method, and a flexographic printing method; a stamping method;a spray method; and various coating methods such as an air doctor coatermethod, a blade coater method, a rod coater method, a knife coatermethod, a squeeze coater method, a reverse roll coater method, atransfer roll coater method, a gravure coater method, a kiss coatermethod, a cast coater method, a spray coater method, a slit orificecoater method, and a calender coater method. Furthermore, examples ofthe patterning method may include chemical etching such as shadow mask,laser transfer, and photolithography, and physical etching usingultraviolet rays, laser, and the like. In addition, examples of theplanarization technique may include a CMP method, a laser planarizationmethod, a reflow method, and the like.

11. EIGHTH EMBODIMENT

The foregoing solid-state imaging element 1 according to an embodimentof the present disclosure is applicable to all electronic apparatusesincluding a solid-state imaging element as an image capturing unit.Examples of the electronic apparatuses may include imaging devices suchas a digital still camera and a video camera, potable terminal deviceshaving an imaging function, and copiers including a solid-state imagingelement as an image scanning unit. An embodiment of the presentdisclosure is also applicable to a robot, a drone, an automobile, amedical apparatus (an endoscope), and the like each including theforegoing imaging device. It should be noted that a solid-state imagingelement 1 according to the present embodiment may take a form of onechip or may take a form of a module into which an imaging unit and asignal processing unit or an optical system are packaged, the modulehaving an imaging function. With reference to FIG. 24, hereinafter, adescription will be given of an exemplary electronic apparatus 700including an imaging device 702 including the solid-state imagingelement 1 according to the present embodiment, as a seventh embodiment.FIG. 24 is an explanatory view illustrating an exemplary electronicapparatus 700 including an imaging device 702 including a solid-stateimaging element 1 according to an embodiment of the present disclosure.

As illustrated in FIG. 24, an electronic apparatus 700 includes animaging device 702, an optical lens 710, a shutter mechanism 712, adrive circuit unit 714, and a signal processing circuit unit 716. Theoptical lens 710 forms an image of image light (incident light) from asubject onto an imaging surface of the imaging device 702. Signalelectrical charges are thus accumulated in the solid-state imagingelement 1 of the imaging device 702 for a certain period of time. Theshutter mechanism 712 is opened and closed to control a period in whichthe imaging device 702 is irradiated with light and a period in whichthe imaging device 702 is shielded from light. The drive circuit unit714 supplies to the imaging device 702 a driving signal for controllinga signal transfer operation by the imaging device 702, and supplies tothe shutter mechanism 712 a driving signal for controlling a shutteroperation by the shutter mechanism 712. That is, the imaging device 702performs signal transfer based on a driving signal (a timing signal)supplied from the drive circuit unit 714. The signal processing circuitunit 716 performs various kinds of signal processing. For example, thesignal processing circuit unit 716 outputs a video signal subjected tosignal processing to a storage medium (not illustrated) such as a memoryor to a display (not illustrated).

12. CONCLUSION

As described above, according to an embodiment of the presentdisclosure, it is possible to actualize phase difference detectionpixels 100 a and 100 b that enable a finer pattern of pixels and alsoenable improvement in quality of a captured image in a stacked structureincluding a plurality of photodiodes.

In the foregoing embodiments of the present disclosure, the solid-stateimaging elements have been described with a first conduction typedefined as a P type, a second conduction type defined as an N type, andelectrons used as signal electrical charges. However, an embodiment ofthe present disclosure is not limited to such examples. For example, thepresent embodiment may employ a solid-state imaging element with a firstconduction type defined as an N type, a second conduction type definedas a P type, and holes used as signal electrical charges.

Also in the foregoing embodiments of the present disclosure, thesemiconductor substrates 10 are not necessarily a silicon substrate, butmay be other substrates (e.g., a silicon-on-insulator (SOI) substrate,an SiGe substrate, and the like). Alternatively, the semiconductorsubstrates 10 may be such various substrates on which a semiconductorstructure and the like are formed.

In addition, a solid-state imaging element according to an embodiment ofthe present disclosure is not limited to a solid-state imaging elementconfigured to sense distribution of quantities of incident light asvisible light and to capture an image of the distribution. For example,the present embodiment is applicable to a solid-state imaging elementconfigured to capture an image of distribution of quantities of incidentinfrared rays, X rays, particles, or the like, or a solid-state imagingelement (a physical quantity distribution sensing device) such as afingerprint detection sensor configured to sense distribution of otherphysical quantities, such as pressure or capacitance, and to capture animage of the distribution.

13. SUPPLEMENT

Preferred embodiments of the present disclosure have been described indetail with reference to the accompanying drawings; however, thetechnical scope of the present disclosure is not limited to suchexamples. It is evident that a person having ordinary knowledge in thetechnical field of the present disclosure is able to conceive variouschanges or modifications within the scope of the technical idea asdefined in the appended claims, and it is to be understood that suchchanges or modifications may also fall within the technical scope of thepresent disclosure.

In addition, the advantageous effects described in the presentspecification are merely descriptive or illustrative but not limitative.That is, the technology related to the present disclosure may produceother advantageous effects apparent to those skilled in the art from thedescription of the present specification, in addition to the foregoingadvantageous effects or in place of the foregoing advantageous effects.

It should be noted that the following configurations also fall withinthe technical scope of the present disclosure.

(1)

A solid-state imaging element comprising:a plurality of pixels including at least two phase difference detectionpixels for focus detection,whereineach pixel has a stacked structure including a plurality ofphotoelectric conversion elements that are stacked on top of each otherand absorb light beams different in wavelength from one another togenerate electrical charges, andeach phase difference detection pixel includes, in the stackedstructure, a color filter that partially covers an upper face of one ofthe photoelectric conversion elements and absorbs a light beam with aspecific wavelength.

(2)

The solid-state imaging element according to (1), whereinin each stacked structure, the color filter covers half of an upper faceof one of the photoelectric conversion elements.

(3)

The solid-state imaging element according to (1) or (2), whereineach color filter has a rectangular shape or a triangular shape when thestacked structure is seen from above.

(4)

The solid-state imaging element according to any one of (1) to (3),whereineach phase difference detection pixel further includes a lens partdisposed above the stacked structure, anda position of a center point of each color filter is different from aposition of an optical axis of the corresponding lens part.

(5)

The solid-state imaging element according to any one of (1) to (4),whereinin the at least two phase difference detection pixels, positions of thecolor filters in the phase difference detection pixels are differentfrom each other when the stacked structures are seen from above.

(6)

The solid-state imaging element according to any one of (1) to (4),comprisinga plurality of the phase difference detection pixels including the colorfilters that absorb light beams different in wavelength from oneanother.

(7)

The solid-state imaging element according to any one of (1) to (4),whereina most absorbed light beam by each color filter is substantiallyidentical in wavelength to a most absorbed light beam by a lightabsorption material contained in one of the photoelectric conversionelements.

(8)

The solid-state imaging element according to any one of (1) to (4),whereineach color filter contains a component that is identical to a componentof a light absorption material contained in one of the photoelectricconversion elements.

(9)

The solid-state imaging element according to any one of (1) to (8),whereinat least one of the photoelectric conversion elements includes anorganic photoelectric conversion film.

(10)

The solid-state imaging element according to (1), whereineach stacked structure includes a first photoelectric conversionelement, a second photoelectric conversion element stacked below thefirst photoelectric conversion element, and a third photoelectricconversion element stacked below the second photoelectric conversionelement, andin each stacked structure, the color filter partially covers an upperface of the first photoelectric conversion element.

(11)

The solid-state imaging element according to (10), whereineach color filter absorbs a light beam with a wavelength that is equalto a wavelength of a light beam to be absorbed by the correspondingfirst photoelectric conversion element.

(12)

The solid-state imaging element according to (10), whereineach color filter absorbs a light beam with a wavelength that is equalto a wavelength of a light beam to be absorbed by the correspondingsecond photoelectric conversion element.

(13)

The solid-state imaging element according to (10), whereineach color filter absorbs a light beam with a wavelength that is equalto a wavelength of a light beam to be absorbed by the correspondingthird photoelectric conversion element.

(14)

The solid-state imaging element according to (11), whereineach first photoelectric conversion element includes an upper electrode,lower electrodes divided for the respective pixels, and a photoelectricconversion film sandwiched between the upper electrode and the lowerelectrodes,each lower electrode is divided into at least two, anda divided one of the lower electrodes is an electrical chargeaccumulating electrode that faces the photoelectric conversion filmacross an insulating film and attracts an electrical charge generated atthe photoelectric conversion film.

(15)

The solid-state imaging element according to (1), whereineach stacked structure includes a first photoelectric conversionelement, a second photoelectric conversion element stacked below thefirst photoelectric conversion element, and a third photoelectricconversion element stacked below the second photoelectric conversionelement, andin each stacked structure, the color filter partially covers an upperface of the second photoelectric conversion element.

(16)

The solid-state imaging element according to (1), whereineach stacked structure includes a first photoelectric conversion elementand a second photoelectric conversion element stacked below the firstphotoelectric conversion element,in each stacked structure, the color filter partially covers an upperface of the first photoelectric conversion element, andeach phase difference detection pixel further includes, in the stackedstructure, another color filter that covers an upper face of the secondphotoelectric conversion element.

(17)

A method for manufacturing a solid-state imaging element including aplurality of pixels including at least two phase difference detectionpixels for focus detection, the method comprising:stacking a plurality of photoelectric conversion elements that absorblight beams different in wavelength from one another to generateelectrical charges; andforming a color filter that partially covers an upper face of one of thephotoelectric conversion elements and absorbs a light beam with aspecific wavelength.

(18)

An electronic apparatus comprising:a solid-state imaging element including a plurality of pixels includingat least two phase difference detection pixels for focus detection,whereineach pixel has a stacked structure including a plurality ofphotoelectric conversion elements that are stacked on top of each otherand absorb light beams different in wavelength from one another togenerate electrical charges, andeach phase difference detection pixel includes, in the stackedstructure, a color filter that partially covers an upper face of one ofthe photoelectric conversion elements and absorbs a light beam with aspecific wavelength.

REFERENCE SIGNS LIST

-   1 SOLID-STATE IMAGING ELEMENT-   10 SEMICONDUCTOR SUBSTRATE-   12, 14 a, 14 b SEMICONDUCTOR REGION-   16 WIRING LAYER-   18 WIRE-   30 PIXEL ARRAY PART-   32 VERTICAL DRIVE CIRCUIT-   34 COLUMN SIGNAL PROCESSING CIRCUIT-   36 HORIZONTAL DRIVE CIRCUIT-   38 OUTPUT CIRCUIT-   40 CONTROL CIRCUIT-   42 PIXEL DRIVE WIRE-   44 VERTICAL SIGNAL LINE-   46 HORIZONTAL SIGNAL LINE-   48 INPUT AND OUTPUT TERMINAL-   100, 100 a, 100 b, 100 x PIXEL-   200, 202, 204 PD-   300 PHOTOELECTRIC CONVERSION FILM-   302 a, 302 b ELECTRODE-   304 INSULATING FILM-   400 TRANSPARENT INSULATING FILM-   500 HIGH REFRACTIVE INDEX LAYER-   502 ON-CHIP LENS-   504 OPTICAL AXIS-   600, 600 a, 600 b, 602 COLOR FILTER-   604 CENTER POINT-   700 ELECTRONIC APPARATUS-   702 IMAGING DEVICE-   710 OPTICAL LENS-   712 SHUTTER MECHANISM-   714 DRIVE CIRCUIT UNIT-   716 SIGNAL PROCESSING CIRCUIT UNIT-   800, 802, 804 LIGHT BEAM

1. A solid-state imaging element, comprising: a plurality of pixelsincluding at least two phase difference detection pixels for focusdetection, wherein each pixel of the plurality of pixels has a stackedstructure including a plurality of photoelectric conversion elementsthat are stacked on top of each other and absorb light beams differentin wavelength from one another to generate electrical charges, eachphase difference detection pixel, of the at least two phase differencedetection pixels, includes a color filter that partially covers an upperface of one of the plurality of photoelectric conversion elements andabsorbs a light beam with a specific wavelength, each stacked structureincludes a first photoelectric conversion element, a secondphotoelectric conversion element stacked below the first photoelectricconversion element, and a third photoelectric conversion element stackedbelow the second photoelectric conversion element, and in each stackedstructure, the color filter partially covers an upper face of the secondphotoelectric conversion element.
 2. The solid-state imaging elementaccording to claim 1, wherein the color filter has a rectangular shapeor a triangular shape when the stacked structure is seen from above. 3.The solid-state imaging element according to claim 1, wherein each phasedifference detection pixel, of the at least two phase differencedetection pixels, further includes a lens part disposed above thestacked structure, and a position of a center point of the color filter,of each phase difference detection pixel, is different from a positionof an optical axis of the corresponding lens part.
 4. The solid-stateimaging element according to claim 1, wherein color filters of the atleast two phase difference detection pixels absorb light beams differentin wavelength from one another.
 5. The solid-state imaging elementaccording to claim 1, wherein at least one of the plurality ofphotoelectric conversion elements includes an organic photoelectricconversion film.
 6. A method for manufacturing a solid-state imagingelement, comprising: stacking a plurality of photoelectric conversionelements that absorb light beams different in wavelength from oneanother to generate electrical charges, wherein the stacked plurality ofphotoelectric conversion elements includes a first photoelectricconversion element, a second photoelectric conversion element stackedbelow the first photoelectric conversion element, and a thirdphotoelectric conversion element stacked below the second photoelectricconversion element; and forming, in each stacked structure, a colorfilter that partially covers an upper face of the second photoelectricconversion element and absorbs a light beam with a specific wavelength.7. An electronic apparatus, comprising: a solid-state imaging elementincluding a plurality of pixels including at least two phase differencedetection pixels for focus detection, wherein each pixel of theplurality of pixels has a stacked structure including a plurality ofphotoelectric conversion elements that are stacked on top of each otherand absorb light beams different in wavelength from one another togenerate electrical charges, each phase difference detection pixel, ofthe at least two phase difference detection pixels, includes a colorfilter that partially covers an upper face of one of the plurality ofphotoelectric conversion elements and absorbs a light beam with aspecific wavelength, each stacked structure includes a firstphotoelectric conversion element, a second photoelectric conversionelement stacked below the first photoelectric conversion element, and athird photoelectric conversion element stacked below the secondphotoelectric conversion element, and in each stacked structure, thecolor filter partially covers an upper face of the second photoelectricconversion element.